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Characteristics of polarization-doped N-face III-nitride light-emitting diodes
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2012.2.2
  • 页码：073507-073507
  • 相关项目：高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
作者： Dong, Kexiu|Chen, Dunjun|Liu, Bin|Lu, Hai|Chen, Peng|Zhang, Rong|Zheng, Youdou|
同期刊论文项目
高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
期刊论文 79
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