中文摘要：

以溶胶-凝胶法制备c轴取向为主的ZnO薄膜作缓冲层,采用阴极电化学沉积技术制备高c轴取向ZnO纳米结构.在0.7 mA/cm^2的恒定电流密度下生长出直径约50 nm、密度为2.5×107 mm^-2的垂直向上的ZnO纳米杆阵列,通过逐渐增大电流密度（0.4～0.9 mA/cm^2）或逐渐减小电流密度（0.9～0.4 mA/cm^2）分别研制出直径逐渐变小或变大的纳米杆阵列,实现了纳米杆形貌、尺寸的可控生长.c轴择优取向的同质ZnO缓冲层既为纳米杆的定向生长提供了形核中心又减小了纳米杆的晶格失配度,有ZnO缓冲层样品的强紫外光发射和较弱的与缺陷相关的可见光发射的光致发光结果证实了缓冲层对提高样品晶体质量的重要作用.

英文摘要：

Using c-oriented ZnO film prepared by spin-coating method as buffer layer,ZnO nanostructures were controllablely synthesized via electrochemical route. The well-aligned ZnO nanorod （about 50 nm in diameter） arrays with the density of 2.5×10^7 mm^-2 were obtained under the unchanged synthesis current density condition. By changing properly the synthesis current density （increasing or decreasing gradually） during growth process,we obtained the vertically ZnO nanorod arrays with the changed diameter （thin or thicken gradually）,that is,realizing the controllable growth of the morphology and dimension of ZnO nanorods. The c-oriented ZnO buffer layer not only supplies the nucleating centers for well-aligned growth,but also reduces significantly the lattice mismatch between Si substrate and ZnO. PL results indicate that the ZnO nanorod arrays samples with ZnO buffer layer have much stronger ultraviolet emission and weaker visible emission as compared to the sample without ZnO buffer layer, showing the important action of ZnO buffer layer on obtaining excellent ZnO crystal quality.