中文摘要：

少数层MoSe_2材料作为一种新型半导体材料,具有较高的光电转换效率。综述了单层或数层MoSe_2二维材料的特性,简述了MoSe_2二维纳米材料的主要制备方法,包括机械剥离法、化学气相沉积（CVD）法和分子束外延（MBE）法。MoSe_2材料可形成直接带隙半导体材料,MoSe_2场效应管应用了MoSe_2材料良好的电学特性,由于MoSe_2材料具有优异的光学特性,因此可用于制作二次谐波器。介绍了MoSe_2二维材料中光二次谐波的产生及相关特性,并列举了MoSe_2二维材料在晶体管、光学探测器方面现有的研究及应用。最后指出,提升制备效率是使MoSe_2材料得到广泛应用的必备条件。

英文摘要：

The few layers MoSe_2 material is a new type of semiconductor materials with high photoelectric conversion efficiency.The properties of the single layer/few layers MoSe_2two-dimensional materials are reviewed,and the preparation methods of the MoSe_2two-dimensional materials are introduced,including the mechanical stripping method,chemical vapor deposition（CVD）method,and molecular beam epitaxy（MBE）method.The MoSe_2 material can form the direct band gap semiconductor material,and the MoSe_2 field effect transistor applies the good electrical properties of the MoSe_2 materials.Besides,the MoSe_2 material can be used to fabricate the optical second-harmonic generation devices because of its excellent optical properties.The optical second-harmonic generation in the MoSe_2two-dimensional material and related characteristics are presented,and the research and application of the MoSe_2two-dimensional material for the transistors and optical detectors are outlined.Finally,it is pointed out that the application field of the MoSe_2 material can be widened by improving the preparation efficiency of the MoSe_2 material.