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中文摘要：
采用Si/InP低温晶片键合技术,设计并制作了InGaAs/Si雪崩光电二极管。器件利用InGaAs做吸收层,Si做增益层,光敏面大小50μm×70μm;测试结果表明器件有正常的光响应特性,击穿电压为41V,暗电流为99nA,此时光电流比暗电流高3个数量级。
英文摘要：
The InGaAs/Si avalanche photodiodes were fabricated by low temperature direct wafer bonding,using InGaAs and Si as the absorption layer and multiplication layer respectively.The area of the optical window of APD is 50μm×70μm and the normal optical response is performed.The devices obtain the breakdown voltage of 41Vand dark current of about 99nA when the dark current is three orders of magnitude higher than the photocurrent.
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