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Transparent and electrical properties of Ga-doped Zn1-x Cd (x) O films post-annealed in vacuum and n
  • ISSN号：0957-4522
  • 期刊名称：Journal of Materials Science: Materials in Electro
  • 时间：2013.6
  • 页码：2116-2121
  • 相关项目：高挥发性多元稀土过渡金属硅化物与锗化物单晶生长与物理性能
作者： Liu, J. M.|Geng, W. C.|Cao, C. D.|Cao, M. M.|
同期刊论文项目
高挥发性多元稀土过渡金属硅化物与锗化物单晶生长与物理性能
期刊论文 32 会议论文 1 专利 7
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