中文摘要：

我们从在 1300 nm 的电信乐队射出的单个 InAs 量点(QD ) 在回声荧光(RF ) 上报导。InAs/GaAs QD 在平面光 microcavity 被嵌入， RF 被直角的刺激察觉几何学为深深地压制散布的剩余激光测量。极端弱的 He-Ne 激光是必要的作为门激光被使用获得 RF。有超过一个时期的 Rabi 摆动通过微微秒(ps ) 被观察搏动的激光刺激。激子的反响的控制为认识到按需的单个光子排放和量操作开创新可能性固态在电信的 qubits 乐队。

英文摘要：

We report on the resonance fluorescence （RF） from single InAs quantum dots （QDs） emitting at the telecom band of 1300 nm. The InAs/GaAs QDs are embedded in a planar optical microcavity and the RF is measured by an orthogonal excitation-detection geometry for deeply suppressing the residual laser scattering. An ultra-weak He-Ne laser is necessary to be used as a gate laser for obtaining RE Rabi oscillation with more than one period is observed through the picosecond （ps） pulsed laser excitation. The resonant control of exciton opens up new possibilities for realizing the on-demand single photon emission and quantum manipulation of solid-state qubits at telecom band.