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A Study of P/E Cycling Impaction on Drain Disturb for 65nm NOR Flash Memories by Low Frequency Noise
  • ISSN号：1058-4587
  • 期刊名称：Integrated Ferroelectrics: An International Journa
  • 时间：2014.5.14
  • 页码：50-56
  • 相关项目：面向三维集成的纳米尺度电荷陷阱存储器机理与可靠性研究
作者： Xiaonan Yang|Zongliang Huo|Zongyong Wang|Ming Liu|
同期刊论文项目
面向三维集成的纳米尺度电荷陷阱存储器机理与可靠性研究
期刊论文 24 会议论文 15
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