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Subthreshold behavior models for short-channel junctionless tri-material cylindrical surrounding-gat
  • ISSN号：0026-2714
  • 期刊名称：Microelectronics Reliability
  • 时间：2014.7
  • 页码：1274-1281
  • 相关项目：无结围栅纳米线MOSFET的短沟道效应研究
作者： Li, Cong|Zhuang, Yiqi|Han, Ru|Jin, Gang|
同期刊论文项目
无结围栅纳米线MOSFET的短沟道效应研究
期刊论文 19 会议论文 3
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