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Novel Reduced ON-Resistance LDMOS With an Enhanced Breakdown Voltage
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2014.12
  • 页码：4304-4308
  • 相关项目：高压、超低功耗的易集成SOI功率器件机理与新结构研究
作者： Kun Zhou|Ruichao Tian|Bo Zhang|Zhaoji Li|
同期刊论文项目
高压、超低功耗的易集成SOI功率器件机理与新结构研究
期刊论文 37 会议论文 4 获奖 6
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