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中文摘要：
综述了蒸发法、溅射后硒化法、单靶直接溅射法制备CIGS光吸收层的工艺和电池性能,比较了它们的优缺点;详细介绍了粉末冶金参数（如烧结温度、压力、时间）对制备CIGS靶材致密度、成分均匀性的影响;着重阐述了单靶溅射工艺参数（如衬底温度、溅射功率、工作气压）对沉积的CIGS薄膜的相结构、形貌、光学及电学性能的影响。
英文摘要：
Three CIGS absorber and cell fabricated process of co-evaporation, sputtering and selenization, sin gle target sputtering are reviewed. Relative merits of these methods are investigated. The powder metallurgy method for quaternary target manufacture are described detailedly. The effect of parameters, such as temperature,pressure and hold time on the target density and composition uniformity are elaborated. The dependence of CIGS absorber phase structure, morphology and optical-electrical properties on the magnetron sputtering parameters （substrate tempera- ture, sputtering power, gas pressure） are emphatically introduced.
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