中文摘要：

以硅纳米孔柱阵列（Si—NPA）为衬底，通过采用真空蒸镀技术沉积金属锌，再在纯氧气氛中进行氧化退火的方法，制备出具有阵列特征的ZnO／Si—NPA异质结构材料。研究发现，ZnO／Si—NPA的表面形貌、结构和光致发光特性强烈依赖于氧化退火温度。当氧化退火温度低于400℃时，样品的发光主要来自于Si—NPA衬底；当氧化退火温度高于700℃时，样品的发光主要来自于ZnO薄膜；经过600℃氧化退火的样品则同时包含有来自于Si—NPA和ZnO薄膜的发光。上述结果表明，通过控制ZnO／Si—NPA制备过程中的氧化退火温度，可以在一定程度上实现对其光致发光谱的有效调控。这对未来制备具有特定功能的半导体光电器件具有重要的实际意义。

英文摘要：

Regularly arrayed zinc oxide/silicon nanoporous pillar array （ZnO/Si-NPA） heterostructure was prepared by evaporating zinc atoms on Si-NPA substrate followed by an annealing process in pure oxygen environment. It was found that the morphology, structure and photoluminescence（PL） of ZnO/Si-NPA highly depends upon the annealing temperature adopted in sample preparing process. When the annealing temperature is below 400℃ or above 700℃, the PL would be mainly attributed to the light emission from Si-NPA substrate or ZnO film, respectively. PL originating from both Si-NPA substrate and ZnO film is simultaneously observed in the sample prepared with an annealing temperature of 600℃. Our experimental results show that to a degree, the PL could be effectively controlled through changing the annealing temperature adopted in the preparing process. This might be of practical importance in fabricating optoelectronic devices.