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纳米压印技术在LED器件制备中的应用
  • ISSN号：1006-4125
  • 期刊名称：激光与光电子学进展
  • 时间：2013.2.2
  • 页码：200021-200027
  • 相关项目：宽禁带半导体极化诱导能带调控原理及器件应用
作者： 庄喆|刘斌|张荣|李烨操|谢自力|陈鹏 等|
同期刊论文项目
宽禁带半导体极化诱导能带调控原理及器件应用
期刊论文 95 会议论文 29 专利 6
同项目期刊论文
Study of Rashba spin splitting and intersubband spin-orbit coupling effect in AlGaN/GaN quantum well
Electrothermally driven current vortices in inhomogeneous bipolar semiconductors
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100)
Gallium Nitride Nanowires Grown by Hydride Vapor Phase Epitaxy
GaN电感耦合等离子体刻蚀的优化和损伤分析
Si(111)衬底上HVPE GaN厚膜生长
InGaN/GaN薄膜的阴极荧光研究
LPCVD法在GaN上生长Ge薄膜及其特性(英文)
红橙光InGaN/GaN量子阱的结构与光学性质研究
Surface morphology and composition studies in InGaN/GaN film grown by MOCVD
The growth and properties of m-plane InN epilayer on LiAlO2(100) by metal-organic chemical vapor dep
Magnetic and electrical properties of ε-Fe3N on c-plane GaN
GaN纳米柱的量子效率研究
氢化物气相外延生长的GaN膜中的应力分析
Fe/GaN、Fe_3N/GaN的生长及其性能研究
Effects of V/III ratio on the growth of a-plane GaN films
Ultraviolet emission efficiencies of Al(x)Ga(1-x)N films pseudomorphically grown on Al(y)Ga(1-y)N te
Electrothermal Dynamics of Semiconductor Nanowires under Local Carrier Modulation
Influence of biaxial strain on near-band-edge optical properties of c- and a-plane wurtzite-InN film
Growth and Properties of Blue and Amber Complex Light Emitting InGaN/GaN Multi-Quantum Wells
Influence of Fluorine on the Conductivity and Oxidation of Silicon Nanomembranes after Hydrofluoric
Structural properties of GaN(0001) epitaxial layers revealed by high resolution X-ray diffraction
Simulation of growing GaN in vertical HVPE reactor
Rashba spin splitting for the first two subbands in AlxGa1-xN/GaN heterostructures
Ferromagnetic Fe3N filmsgrownon GaN(0002) substrates by MOCVD
AlGaN-based 330 nm resonant-cavity-enhanced p-i-n junction ultraviolet photodetectors using AlN/AlGa
Rapid Thermal Annealing Characteristics of Mg Doped InN by X-Ray Diffraction
The parameters in the band-anticrossing model for In (x) Ga1-x N (y) P1-y before and after annealing
Effectr of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped
Temperature dependence of the point defect properties of GaN thin films studied by terahertz time do
Analysis of magnetic structures of iron nitrides by Landau’s theory of second-order phase tran
Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoim
Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN
A Band-Gap Energy Model of the Quaternary Alloy In_xGa_yAl_(1-x-y)N using Modified Simplified Cohere
Mosaic structure in epitaxial GaN film varying with thickness
study on the photolumminescence properties of InN films
Roles of V/III ratio and mixture degree in GaN growth CFD and MD simulation study
Strain in GaN Epi-Layer Grown by Hydride Vapor Phase Epitaxy,
Study of GaN nano-pillars with Nickel nano-islands mask
新型电极材料石墨烯在LED中的应用
Fe/GaN、Fe3N/GaN的生长及其性能研究
厚度对GaN薄膜的发光性能的影响
Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1−xN film
Growth of In‐rich and Ga‐rich InGaN alloys by MOCVD and fabrication of InGaN‐based photoelectrodes
A model for thermal annealing on forming In-N clusters in InGaNP
Effect of Rapid Thermal Annealing on the Formation of In-N Clusters in Strained InGaNAs
Composition pulling effect and strain relief mechanism in AlGaN/AlN distributed Bragg reflectors
AlxGa1-xN及掺Mg Al0.54Ga0.46N的阴极荧光特性
Impact of anisotropic strains on low-frequency dielectric properties and room-temperature polar phas
The Research on GaN Based Multiple Quantum Well LEDs withNanopillar Arrays for EnhancingLight-emitti
A modified simplified coherent potential approximation model of band gap energy of III-V ternary all
Identifying Interface States in AlInN/GaN Heterostructure by Photocurrent Method
Arrays of GaN nano-pillars fabricated by nickel nano-island mask
Optical and Structural Properties of Cr-Doped GaN Grown by HVPE Method
Design and fabrication of SiO2/Si3N4 dielectric distributed Bragg reflectors for ultraviolet optoele
The Formation and Characterization of GaN Hexagonal Pyramids
The LiNbO3 thin films deposited on the Al0.28Ga0.72N/GaN substrate
Simulation of a new style vertical HVPE system
Gate voltage and structure parameter modulated spin splitting in AlGaN/GaN quantum wells
MOCVD生长的InGaN/GaN薄膜发光特性研究
Raman Scattering Study of InxGa1-xN Alloys with Low Indium Compositions
利用X射线衍射研究Mg掺杂的InN的快速退火特性
GaN纳米柱发光特性
GaN薄膜中的马赛克结构随厚度发生的变化
InN的光致发光特性研究
氢化物气相外延生长高质量GaN膜生长参数优化研究
紫外波段SiO2／Si3N4介质膜分布式布拉格反射镜的制备与研究
GaN nanopillars with a nickel nano-island mask
氢化物气相外延生长GaN膜性质研究
背势垒对InAlN/GaN异质结构中二维电子气的影响
用氢化物气相外延（HVPE）法生长的氮化铟薄膜的性质研究
PECVD法氮化硅薄膜生长工艺的研究
Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD
阳极氧化法制备氧化铝纳米线
LPCVD法在GaN上生长Ge薄膜及其特性
AlGaN/GaN量子阱中子带的Rashba自旋劈裂和子带间自旋轨道耦合作用研究
利用Ni纳米岛模板制备半极性晶面GaN纳米柱
宽带隙半导体材料光电性能的测试
深能级对白光LED的电致发光和I-V特性的影响
Effects of V/III ratio on the growth of a-plane GaN films
GaN hexagonal pyramids formed by a photo-assisted chemical etching method
Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask
期刊信息
  • 《激光与光电子学进展》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国科学院上海光精密机械研究所
  • 主编：范滇元
  • 地址：上海市嘉定区清河路390号
  • 邮编：201800
  • 邮箱：gwjg@mail.shcnc.ac.cn
  • 电话：021-69918427 69918166
  • 国际标准刊号：ISSN：1006-4125
  • 国内统一刊号：ISSN：31-1690/TN
  • 邮发代号:4-179
  • 获奖情况:
  • 1995年获全国光学期刊一等奖,1996年获上海市优秀期刊表扬奖,1997年获中科院情报工作优质服务奖
  • 国内外数据库收录:
  • 中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）
  • 被引量:8313