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中文摘要：
在室温条件下,基于太赫兹时域频谱（THz-TDS）技术研究了SBN：Ce陶瓷在532 nm连续激光激发下的介电响应.在外加光场的作用下,该陶瓷的介电常数表现出良好的调制特性,介电改变量达到8.5%;同时,介电损耗增加了15%.实验结果表明,该材料折射率的变化｜Δn｜与外加光场强度呈现线性关系.通过建立模型,分析了SBN：Ce陶瓷的光-铁电机理,这些实验结果可以被归结为,激发的自由载流子在样品内部形成的内建电场导致的介电常数改变.探索铁电陶瓷材料在太赫兹波段的光-铁电性质对于太赫兹波调制器件的研究具有指导意义.
英文摘要：
The dielectric response of SBN： Ce ceramics to the 532 nm cw laser w as investigated at room temperature by means of a terahertz time-domain spectroscopy. When the external laser field is imposed onto the SBN： Ce ceramics,the permittivity of the sample show s an appreciable change w ith amplitude variation up to 8. 5% and the dielectric loss increase 15%,respectively. The refractive index ｜ Δn ｜ varies linearly w ith the intensity of the applied laser. The photoferroelectric physical mechanisms of SBN： Ce ceramics can be attributed to the internal space field in the ceramics caused by the light excited free carries w ith the analytic models. The results present important references for design and selection of the terahertz tunable devices.
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