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中文摘要：
基于GaN转移电子器件最基本的工作模式——畴渡越时间模式，计算了GaN转移电子器件的理想最高振荡频率，得到该类型微波转移电子器件的最高振荡频率可达4．7THz，接近GaAs转移电子器件最高振荡频率（0．6THz）的8倍．从理论上计算出GaN转移电子器件的理想最大输出功率，结果表明GaN转移电子器件在功率输出方面具有很大优势．最后还讨论了GaN转移电子器件在畴渡越时间模式下，能够产生稳定Gunn振荡的两个基本条件，即电子浓度N与器件有源区长度L乘积要大于该器件的设计标准（（NL）。=6．3×10^12cm^-2）及有源区的掺杂浓度N要小于临界掺杂浓度Ncrit（3．2×10^17cm^-3）．本工作揭示出GaN转移电子器件在高频率和大功率输出方面都具有重要优势，作为大功率THz微波信号源将具有广阔的应用前景．
英文摘要：
Based on the basic transit-time domain operation mode of TEDs,we first calculated the ideal maximum oscillation frequency of GaN-based transferred-electron devices （TEDs） ,which can be as high as 4.7THz. This value is nearly 8 times as high as that of GaAs-based TEDs, which is about 0.6 THz. Next,we calculated the maximum output power of GaN-based TEDs indicating that GaN- based TEDs are promising for high microwave power applications. We also discussed the two critical conditions in GaN-based design for generating stable Gunn oscillations in transit-time domain mode. Our calculation indicates that the product of electron concentration and the length of active layer should be higher than a critical value of 6.3 × 10^12 cm^-2 ; and the doping lever of the active layer has to be smaller than a critical level of 3.2 × 10^17 cm^-3. This study suggests that GaN-based TEDs have significant advantages for high-frequency and high-power microwave generation,which are perspective for high-power THz signal source applications.
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