为了提高TiO2/Ti光电极在可见光下的光电催化活性,采用阳极氧化法制备了一种新型的硫掺杂TiO2/Ti光电极.采用扫描电子显微镜、X射线衍射、X射线荧光光谱等技术对光电极进行了表面形貌、结晶形态、晶粒尺寸、硫的掺杂量和价态以及吸光性能表征.研究表明:硫掺杂TiO2/Ti光电极的最佳制备条件为:成膜电压160V、电流密度100mA/cm^2、Na2SO2质量浓度750mg/L;所制备的光电极具有良好的光电催化氧化降解邻苯二甲酸二甲酯活性,并能有效地矿化其中间产物;与TiO2/Ti电极相比,硫的掺杂可以显著提高其在可见光下的光电催化性能.
To improve the photoelectrocatalytic activity of TiO2/Ti photoelectrode under visible light,a novel sulfur-doped TiO2/Ti photoelectrode was prepared by anodization.The surface morphology,crystal,particle size,amount of sulfur,valence state of sulfur and optical characteristics of sulfur-doped TiO2/Ti photoelectrode were characterized by scanning electron microscope(SEM),X-ray diffraction(XRD),X-ray fluorescence(XRF),X-ray photoelectron spectroscopy(XPS),and UV/VIS diffuse reflection spectra.Results indicate that sulfur-doped TiO2 /Ti photoelectrode shows a good photoelectrocatalytic activity on the removal and mineralization of dimethyl phthalate(DMP) under visible light irradiation when the prepared conditions are voltage of 160 V,current density of 100 mA/cm^2 and sulfur concentration of 750 mg/L.The doped sulfur can significantly improve the photoelectrocatalytic activity of TiO2 /Ti photoelectrode under visible light.