采用溶胶-凝胶法在FTO/glass衬底上制备了Bi4Ti3O12和Bi3.35Nd0.65Ti3O12(BNT)薄膜,研究了Nd掺杂对Bi4Ti3O12薄膜的晶体结构、铁电性能和介电常数的影响.XRD研究表明Nd掺杂未对薄膜的结晶产生显著的影响。铁电性的测试表明,通过Nd掺杂,使薄膜的介电性和铁电性得到了增强,剩余极化强度由57.2μC/cm^2增加到68.4μC/cm^2.
The Bi4Ti3O12 and Bi3.35Nd0.65 Ti3O12 thin films are prepared on the FTO/glass substrate using sol - gel method. The structures Au/Bi3.35 Nd0.65Ti3O12/FTO/glass and Au/Bi4Ti3O12/FTO/glass are fabricated. The effects of Nd doping on the microstructures, and ferroelectric properties of Bi4Ti3O12 films are investigated. XRD results showed that there is no substanfial effect to the crystallization of Bi4Ti3 O12 films by Nd doping. The results of ferroelectricity and dielectric property measurement show that the ferroelectricity and dielectric property are enhanced by Nd doping. Next, the remnant polarization is increased from 57.2 μC/cm^2 to 68.4 ^C/cm^2.