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A Novel Design and Fabrication of Magnetic Random Access Memory Based on Nano-ring-type Magnetic Tunnel Junctions

ISSN号：1005-0302
期刊名称：《材料科学技术学报：英文版》
时间：0
分类：TP333.8[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术] O482.5[理学—固体物理;理学—物理]
作者机构：[1]Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing 100080, China
相关基金：Acknowledgements The project was supported by the State Key Project of Fundamental Research of Ministry of Science and Technology （No. 2006CB932200）, the National Natural Science Foundation of China （NSFC, No. 10574156）, and the Knowledge Innovation Program of Chinese Aca.demy of Sciences. Prof. X.F.Han gratefully thanks the protial support of 0utstanding Young Researcher Foundation （Nos. 50325104 and 50528101）, and K.C.Wong Education Foundation, Hong Kong.

作者： X.F.Han H.X.Wei Z.L.Peng H.D.Yang J.F.Feng G.X.Du Z.B.Sun L.X.Jiang Q.H.Qin M.Ma Y.Wang Z.C.Wen D.P.Liu W.S.Zhan State[1]

关键词：纳米环形磁性隧道结, 自旋极化, 磁性随机存取存储器, 设计, 制造, Nano-ring-type magnetic tunnel junctions, NR-MTJ, MRAM, spin polarization, Spin transfer effect

中文摘要：

有层的 Nano-ring-type 磁性的隧道连接( NR-MTJs )组织 ofTa ( 5 )/Ir_( 22 )Mn_( 78 )( 10 )/Co_( 75 )Fe_( 25 )( 2 ) /Ru ( 0.75 )/Co_( 60 )Fe_( 20 )B_( 20 )( 3 ) /AI ( 0.6 ) -oxide/Co_(60)Fe_(20)B_(20)(2.5)/Ta(3)/Ru(5)(thickness unit:nm )在磁控管劈啪作响免职与光平版印刷术，电子 beamlithography ( EBL )和蚀刻 techniques.The 的 Ar 离子横梁相结合的 Si ( 100 ) /SiO2 substrateusing 上是制作nano 的有约 50 和 100 nm 并且也的 inner-andouter-diameter 的更小的 NR-MTJs 他们的 corres

英文摘要：

Nano-ring-type magnetic tunnel junctions （NR-MTJs） with the layer structure of Ta（5）/Ir22Mn78（10）/ Co75Fe25（2）/Ru（0.75）/CoooFe20B20（3）/Al（0.6）-oxide/Co60Fe20B20（2.5）/Ta（3）/Ru（5）（thickness unit： nm） were nano-fabricated on the Si（100）/SiO2 substrate using magnetron sputtering deposition combined with the optical lithography, electron beam lithography （EBL） and Ar ion-beam etching techniques. The smaller NR-MTJs with the inner- and outer-diameter of around 50 and 100 nm and also their corresponding NR-MTJ arrays were nano-patterned. The tunnelling magnetoresistance （TMR ＆ R） versus driving current （I） loops for a spin-polarized current switching were measured, and the TMR ratio of around 35% at room temperature were observed. The critical values of switching current for the free Co60Fe20B20 layer relative to the reference Co6oFe2oB2o layer between parallel and anti-parallel magnetization states were between 0.50 and 0.75 mA in such NR-MTJs. It is suggested that the applicable MRAM fabrication with the density and capacity higher than 256 Mbit/inch2 even 6 Gbite/inch2 are possible using both I NR-MTJ＋1 transistor structure and current switching mechanism based on based on our fabricated 4×4 MRAM demo devices.

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