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中文摘要：
介绍了一种采用O．5μmCMOSN阱工艺制作的带隙基准电压源电路，谈电路具有高电源抑制比和较低的温度系数。通过将电源电压加到运算放大器上，运算放大器的输出电压为整个核心电路提供偏置电压，整个核心电路的偏置电压独立于电源电压，使得整个带隙基准电路具有非常高的电源抑制比．基于SPECTRE的仿真结果表明，其电源抑制比可达116dB，在-40℃-85℃温度范围内温度系数为46ppm／℃，功耗仅为1．45mw，可以广泛应用于模／数转换器、数／模转换器、偏置电路等集成电路模块中．
英文摘要：
A bandgap voltage reference circuit using 0.5 pm complementary metal oxide semiconductor transistor （CMOS） N-well process is presented in the paper. The circuit has high power supply rejection ratio （PSRR） and low-temperature coefficient. The bias voltages of core circuit is independent to the power supply voltage, and the whole bandgap circuit has high PSRR through adding the power supply to the operational amplifier of which the output voltage is supplied for the core circuit. The simulation results for this circuit using SPECTRE show that the PSRR is 116 dB, the temperature coefficient from -40℃ to 85℃ temperature range is 46 ppm/℃ and the power consumption is only 1.45 mW. The bandgap discussed in this paper can be widely used in ADC, DAC, reference circuit and so on.
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