中文摘要：

采用温度梯度法（TGT）生长了直径为32 mm大尺寸ZnSe晶体。对生长出的ZnSe单晶进行了光学性能分析。采用磁控溅射方法在ZnSe晶体上镀铬膜,通过热扩散方法成功制备出中红外Cr∶ZnSe激光晶体,并研究了Cr∶ZnSe晶体的光谱性能。吸收光谱测试观察到了Cr2＋（3d4）取代四面体配位Zn2＋的5T2→5E能级的跃迁在1800nm的吸收带。77 K低温的光致发光光谱表明Cr∶ZnSe晶体具有中心波长位于2.2μm的宽谱带发射特征。

英文摘要：

Large sized high quality ZnSe crystal was grown by the temperature gradient technique（TGT） method.The optical property of the as-grown ZnSe crystal was studied.Chromium films were deposited on the surface of ZnSe crystal by magnetron sputtering method,the mid-infrared Cr∶ZnSe laser crystals were prepared by the thermal diffusion method.The spectral properties of Cr∶ZnSe were investigated.The absorption spectra of Cr∶ZnSe shows a strong broad absorption band with a peak at about 1800 nm is attributed to the 5T2→5E transition of the Cr2＋（3d4）substituted for the Zn2＋ in the tetrahedral site.PL spectra measured at 77 K of Cr∶ZnSe crystal shows broad band emission around centre wavelength at 2.2 μm.