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Structural and magnetic properties in Mn-doped GaN grown by metal organic chemical vapor deposition
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：0
  • 页码：152116-152116
  • 语言：英文
  • 相关项目：获得高质量低位错密度GaN衬底的生长新思路及相关关键问题研究
作者： Xiu, X. Q.|Zheng, Y. D.|Li, X.|Gu, S. L.|Cui, X. G.|Han, P.|Zhang, R.|Tao, Z. K.|Shi, Y.|Xie, Z. L.|
同期刊论文项目
获得高质量低位错密度GaN衬底的生长新思路及相关关键问题研究
期刊论文 35 会议论文 8 专利 8
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