本文通过在磁场下测定硅熔体的粘度,根据ηeff=(μBb)2σ关系式,间接计算出硅熔体的电导率。其结果与用其他方法测试的数值吻合。用电子导电、离子导电的变化,解释了硅熔体在1420~1690℃范围电导率的变化,研究结果对指导大直径硅单晶生长具有实际意义。
The conductivity was calculated by measuring the viscosity of silicon melt in the magnet field and according to the relationship of ηelf = (μBb)2σ. The results were consistent with the value reported by other method. The variety of silicon melt conductivity at the range of 1420℃ to 1690℃ was explained with the variety of electrons and ions. This work is significant to the growth of large diameter silicon.