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XeF2对SiO2／Si的干法刻蚀
  • ISSN号：0253-2778
  • 期刊名称：《中国科学技术大学学报》
  • 时间：0
  • 分类：TN3[电子电信—物理电子学]
  • 作者机构：[1]中国科学技术大学国家同步辐射实验室,安徽合肥230029, [2]中国科学技术大学中国科学院量子信息重点实验室,安徽合肥230027
  • 相关基金：国家大科学工程（NSRL二期工程）,国家自然科学基金（60537020,60121503）和中国科学技术大学青年基金（KA2310000007）资助.
作者： 尉伟[1], 吴晓伟[2], 吕凡[2], 肖云峰[2], 付绍军[1], 裴元吉[1], 韩正甫[2]
关键词： XEF2, 硅刻蚀, 各向同性干法刻蚀, 光学微腔, XeF2, silicon etching, isotropic dry etching, optical microcavity
中文摘要：

XeF2是一种可以在常温下与硅发生反应的气体，可用作对硅进行干法刻蚀的工作气体，其对硅刻蚀特性呈现各向同性．研制了一个使用脉冲法对二氧化硅／硅体系进行XeF2刻蚀的系统，刻蚀系统简单且操作容易．利用该系统成功地刻蚀出“蘑菇状”的SiO2／Si结构，得到的刻蚀选择比大于1000．

英文摘要：

XeF2 can react with silicon in room temperature and be kind of isotropie dry etching. A XeF2 pulse etching system with used as silicon dry etching gas, it is a simple structure and easy operating has been constructed to perform SiO2/Si etching. With this system, the mushroom like SiO2/Si structure has been fabricated, and the etching selectivity between silicon and silica mask exceed 1 000.

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期刊信息
  • 《中国科学技术大学学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国科学技术大学
  • 主编：何多慧
  • 地址：安徽省合肥市金寨路96号
  • 邮编：230026
  • 邮箱：JUST@USTC.EDU.CN
  • 电话：0551-63601961 63607694
  • 国际标准刊号：ISSN：0253-2778
  • 国内统一刊号：ISSN：34-1054/N
  • 邮发代号:26-31
  • 获奖情况:
  • 1999年，全国优秀高等学校自然科学学报及教育部优...,2001年，安徽省1999-2001年度优秀科技期刊一等奖,2002年，第三届华东地区优秀期刊奖
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  • 被引量:8237