我们调查了在半传导性和基于 TiO2 的变阻器的非线性的电的性质上浸泡时间的影响陶器的样品。我们使用了单个 sintering 进程并且制作了六件磁盘样品(Sr,双性人, Si, Ta ) 做的基于 TiO2 的变阻器陶艺 sintered 在 1 250 为 0.5 h, 1.0 h, 2.0 h, 3.0 h, 4.0 h,和 5.0 h 分别地。样品被 X 光检查衍射,故障电压,和复杂阻抗描绘。当浸泡时间从 0.5 h 增加到 5.0 h,结果显示出那,当非线性的系数增加然后减少时,故障电压在升起前落下。我们建议那,认为谷物半传导性和基于 TiO2 的变阻器的非线性的电的性质是陶艺,最佳的浸泡时间在 2.0 h 和 3.0 h 之间。
We investigated the influence of soaking time on the semi-conductivity and nonlinear electrical properties of TiO2- based varistor ceramic samples. We used a single sintering process and fabricated six disk samples of (Sr, Bi, Si, Ta)-doped TiO2- based varistor ceramics sintered at 1 250℃ for 0.5 h, 1.0 h, 2.0 h, 3.0 h, 4.0 h, and 5.0 h, respectively. The samples were characterized by X-ray diffraction, breakdown voltage, and complex impedance. The results show that as the soaking time increases from 0.5 h to 5.0 h, the breakdown voltage drops before rising while the nonlinear coefficient increases and then decreases. We suggest that, considering both grain semi-conductivity and nonlinear electrical properties of the TiO2-based varistor ceramics, the optimal soaking time is between 2.0 h and 3.0 h.