中文摘要：

采用反应磁控溅射方法,在不同Si（100）衬底温度下,制备出了TiNx薄膜。通过X射线衍射（XRD）、扫描电子显微镜（SEM）对TiNx薄膜的物相、微观结构进行了表征,采用电子能谱仪（EDS）测定了TiNx薄膜的成分,运用四探针测试仪测量了TiNx薄膜的电阻率,研究了衬底温度对溅射TiNx薄膜结构与电阻率的影响。研究结果表明：衬底温度从室温升高到600℃时,随着温度升高,TiNx薄膜的（111）晶面衍射峰逐渐增强,500℃后减弱;（200）晶面衍射峰在300℃时最强,之后减弱。随着衬底温度的升高,TiNx薄膜的晶粒逐渐增大,300℃达最大后减小。随着衬底温度升高,TiNx薄膜的N/Ti原子含量比降低,200℃时降到最低为0.99,随后升高,500℃时最高为1.34,随后再次降低。N/Ti原子含量比与薄膜电阻率呈明显反比变化。

英文摘要：

TiNx films are deposited by reactive magnetron sputtering on Si substrate（100） at different substrate temperature.The crystallization,microstructure and composition of the films are characterized by X-ray diffraction（XRD）,scanning electronic microscope（SEM） and energy dispersive spectrometer（EDS）.The resistivity of TiNx films is measured by a four-probe instrument.The relation of the substrate temperature with the structure and resistivity of TiNx films is investigated.The results show that the diffraction peak intensity of（111） crystalline plane of TiNx films increases gradually as the substrate temperature increases from room temperature to 600 ℃ and it decreases when the temperature is above 500 ℃.The diffraction peak intensity of（200） crystalline plane of TiNx films is the strongest at 300 ℃,then it decreases.The crystal grain size of TiNx films increases as the substrate temperature increases and is up to the largest one about 80 nm in diameter at 300 ℃,then it decreases.The N/Ti atom ratio of TiNx films reduces as the substrate temperature increases and is 0.99 with the lowest ratio at 200 ℃,and after re-increased it is up to the highest ratio of 1.34 at 500 ℃.The resistivity of TiNx films has the obvious inverse relation with the N/Ti atom ratio of of TiNx films.