中文摘要：

将靶材与真空腔之间的伏安特性引入正-反欧姆过渡区间,采用脉冲控制模式研究不同靶电流密度对镀层均匀性和膜/基结合强度的影响规律。实验发现,当靶面放电区电流密度（Id）由0.083 A/cm^2增加至0.175 A/cm^2时,靶电压随靶电流密度的增大呈线性增大关系,与之对应的镀层厚度差由7.984μm增大至14.011μm;但当Id由0.175 A/cm^2增大至0.25 A/cm^2时,靶电压随靶电流密度的增大呈线性减小关系,与之对应的镀层厚度差则由14.011μm减小至10.077μm;而薄膜厚度减小率由97.38%（Id=0.083 A/cm^2）降低为89.491%（Id=0.25 A/cm^2）;另外,在反欧姆区,膜/基结合强度随Id的增大而快速增大。以上结果表明：反欧姆环境下有利于改善镀层的均匀性和提高膜/基结合强度。

英文摘要：

The voltage characteristics between the target and the vacuum chamber were introduced into the positive-ohm and anti-ohm transition section. The influence of the target current density controlled by an impulse model on the uniformity of the coating and the adhesion strength between the film and the substrate was investigated. Results show that the target voltage increases linearly with the increasing of the target current density（Id） from 0.083 A/cm^2 to 0.175 A/cm^2 and correspondingly the coating thickness differences increases from 7.984 μm to 14.011 μm. However, the target voltage decreases linearly with the further increasing of the target current density from 0.175 A/cm^2 to 0.25 A/cm^2, and the coating thickness difference decreases from 14.011 μm to 10.077 μm. The decreasing rate of the film thickness changes from 97.38%（Id=0.083 A/cm^2） to 89.491%（Id=0.25 A/cm^2）. In addition, the adhesion strength between the film and the substrate increases rapidly with the increasing of the target current density in the anti-ohm section. The results indicate that the uniformity of the coating and the film/substrate adhesion can be improved under the anti-ohm environment.