中文摘要：

本文以原子层沉积超薄氧化铝（Al2 O3）为过渡层,采用射频反应磁控溅射法在硅半导体基片上制备了颗粒致密并具有（011）择优取向的二氧化钒（VO2）薄膜.该薄膜具有显著的绝缘体—金属相变特性,相变电阻变化超过3个数量级,热滞回线宽度约为6？C.基于VO2薄膜构建了平面二端器件并测试了不同温度下I-V曲线,观测到超过2个数量级的电流跃迁幅度,显示了优越的电致相变特性.室温下电致相变阈值电压为8.6 V,电致相变弛豫电压宽度约0.1 V.随着温度升高到60？C,其电致相变所需要的阈值电压减小到2.7 V.本实验制备的VO2薄膜在光电存储、开关、太赫兹调控器件中具有广泛的应用价值.

英文摘要：

Quality enhanced VO2 thin films have been sputtering deposited on silicon substrates by introducing an ultrathin Al2 O3 buffer between the substrate and the film. With a preferred orientation （011）, the VO2 films have an excellent thermal-induced metal-insulator transition （MIT）. The electrically-driven MIT （E-MIT） characteristics have also been investigated by applying voltage to VO2 thin film based two-terminal device at particular temperatures. Sharp jumps in electric current are observed in the I-V curve with a variation of amplitude by two orders. The threshold voltage decreases with increasing temperature. At room tempature, the threshold voltage is 8.6V and the phase transition ccurs in a voltage width of only 0.1V. With the sharp and fast phase change, the VO2 thin films can be used in ultrafast switching electronic devices.