中文摘要：

采用磁控溅射方法,以Si（100）为衬底在40～80 W功率下制备了Fe83Ga17薄膜,通过XRD、SEM、室温磁滞回线以及MFM的测量研究了不同溅射功率制备的Fe-Ga薄膜的结构、形貌、磁性能和磁畴。XRD结果表明室温下薄膜样品是bcc（11O）晶体结构。SEM观察结果表明薄膜颗粒尺寸在40～70 nm且随着功率增大,薄膜颗粒的尺寸变大,薄膜厚度增加。室温磁滞回线的测量结果表明一定范围内随着功率增大,样品的矫顽力Hc总体呈上升趋势,饱和磁化强度Ms的变化规律并不明显,剩余磁化强度M和矩形比Mr/Ms呈缓慢下降的趋势。磁畴的观察结果表明样品的磁畴为迷宫畴结构,且随着功率增大,磁畴的尺寸增大。

英文摘要：

Fe83Ga17 thin films were prepared on Si（100） substrates by a dc magnetron sputtering method with sputtering powers 40W≤P≤80 W.The structure and magnetic properties of the films were investigated by X-ray diffraction（XRD）,scanning electron microscope（SEM）,physical property measurement system（PPMS） and magnetic force microscope（MFM）.The results show that all samples exhibit a（110） disordered bcc structure;in addition,the grain size of Fe83Ga17 thin films is 40-70 nm;with increasing of the sputtering power,the grain size slowly increases and the films become thicker.The remanent magnetization Mr and the remanence ratio Mr/Ms decrease slowly with increasing of the sputtering power while the trend of the coercivity Hc is opposite.However,the change of the saturation magnetization Ms is not apparent.The magnetic domain（MD） patterns are the labyrinth structure and the domain sizes are increased with increasing of the sputtering power.