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中文摘要：
介绍了基于正向电压法原理自行研制的大功率LED结温测试系统，结温定量测量精度可达4±0．5℃。利用该系统对不同芯片结构与不同封装工艺的大功率LED热阻进行了测量比较，并对不同结温的大功率LED发光特性进行了研究。结果表明，不同结构芯片温度-电压系数K明显不同；采用热导率更高的粘结材料和共晶焊工艺固定LED芯片，会明显降低封装层次引入的热阻。结温对光辐射功率有直接影响，若保持结温恒定，光辐射功率随电流增大线性增加；若保持外部散热条件不变，热阻大的芯片内部热量积累较快，导致结温上升速度更快，光效随电流增加而下降的趋势也更为严重。
英文摘要：
The j unction temperature of high-power LEDs is accurately measured based on forward-voltage method,the precision with±0.5 ℃ can be obtained. The thermal resistance of LEDs with different chip structure and package technology was compared,and the luminous properties influenced by junction temperature were measured. The results show that the temperature-voltage coefficient ＇K＇ of different chip structure is different. The thermal resistance in package can be reduced by using materials with larger heat conductivity and eutectic bonding technology. The radiation power is directly influenced by the junction temperature. Keeping junction temperature constant, the radiation power increases linearly when the current increases. While keeping cooling condition constant,junction temperature of LEDs with higher thermal resistance increases more rapidly, hence the luminous efficiency decreases more obviously.
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