中文摘要：

从器件结构和电学特性等方面,对具有垂直结构和水平结构的Ⅲ-Ⅴ族纳米线晶体管的最新研究进展进行了综述。对于垂直器件,虽然高质量的垂直Ⅲ-Ⅴ族纳米线易于获得,但栅极的逻辑布线难以实现;对于水平结构器件,虽然栅极的逻辑布线与当前的平面硅差异不大,但无催化剂条件下难以选区定位生长水平Ⅲ-Ⅴ族纳米线。硅基Ⅲ-Ⅴ族纳米线晶体管不仅能有效提高沟道迁移率等性能,而且可以保证与硅工艺的兼容性,同时降低Ⅲ-Ⅴ族材料晶体管高昂的成本。研究表明,水平结构的硅基Ⅲ-Ⅴ族纳米线晶体管将具有更大的发展潜力。

英文摘要：

The latest research progress for Ⅲ-Ⅴ nanowire transistors with the vertical and horizontal structures are summarized from the aspects of device structures and performances.The Ⅲ-Ⅴ nanowire tends to be achieved easily with high quality for vertical transistors,while the logic layout of the gates is difficult to be achieved.In contrast,it is difficult to realize the catalyst-freegrowth position-controlled horizontalⅢ-Ⅴ nanowire for horizontal devices,although the logic layout of the gates is compatible with the current planar silicon process.Si-basedⅢ-Ⅴ nanowire transistors can improve the channel electron mobility and reduce the Ⅲ-Ⅴ device cost with the compatible silicon processing.The research results show that Si-based horizontal Ⅲ-Ⅴ nanowire transistors have a more promising prospect.