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Localization correction to the anomalous Hall effect in amorphous CoFeB thin films
  • 期刊名称:Chinese Physics B
  • 时间:2015
  • 页码:027201-
  • 分类:TN304.11[电子电信—物理电子学] O484.1[理学—固体物理;理学—物理]
  • 作者机构:[1]School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China, [2]Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 相关基金:Project supported by the National Basic Research Program of China (Grant No. 2012CB933102) and the National Natural Science Foundation of China (Grant Nos. 11079052, 11174354, and 5 1172080). A portion of this work is based on the data obtained at 1 W 1 A, BSRE Zhu Tao gratefully acknowledges the assistance of scientists of the Diffuse x-ray Scattering Station during the experiments.
  • 相关项目:CoFeB基新型垂直磁各向异性薄膜的界面调控及其自旋输运特性的研究
中文摘要:

An obvious weak localization correction to anomalous Hall conductance(AHC) in very thin CoFeB film is reported.We find that both the weak localization to AHC and the mechanism of the anomalous Hall effect are related to the CoFeB thickness.When the film is thicker than 3 nm,the side jump mechanism dominates and the weak locaUzation to AHC vanishes.For very thin CoFeB films,both the side jump and skew scattering mechanisms contribute to the anomalous Hall effect,and the weak localization correction to AHC is observed.

英文摘要:

An obvious weak localization correction to anomalous Hall conductance(AHC) in very thin CoFeB film is reported.We find that both the weak localization to AHC and the mechanism of the anomalous Hall effect are related to the CoFeB thickness.When the film is thicker than 3 nm,the side jump mechanism dominates and the weak locaUzation to AHC vanishes.For very thin CoFeB films,both the side jump and skew scattering mechanisms contribute to the anomalous Hall effect,and the weak localization correction to AHC is observed.

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