位置：成果数据库 > 期刊 > 期刊详情页
Growth of (10) semipolar GaN on m-plane sapphire by hydride vapor phase epitxaxy
  • 时间：0
  • 相关项目：m面蓝宝石上非极性与半极性GaN衬底的生长及相关材料问题研究
同期刊论文项目
m面蓝宝石上非极性与半极性GaN衬底的生长及相关材料问题研究
期刊论文 16 会议论文 2
同项目期刊论文
Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using
Theoretical study of polarization-doped GaN-based light-emitting diodes
Enhancement in the Light Output Power of GaN-based Light-Emitting Diodes with Nano-textured Indium T
Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes
Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emi
Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown free-standing G
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE
Hydride vapor phase epitxay growth of semipolar (10) GaN on patterned m-plane sapphire
自支撑GaN厚膜的制备及其光学性能的研究
Mechanical deformation behavior of nonpolar GaN thick films by berkovich nanoindentation
Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-a
Catalytic activation of Mg-doped GaN by hydrogen desorption using different metal thin layers
MOCVD Epitaxy of InAlN on Different Templates