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Luminescence properties of InxGa1-xN （x - 0.04） films grown by metal organic vapour phase epitaxy

ISSN号：1674-1056
期刊名称：《中国物理B：英文版》
时间：0
分类：TN304.23[电子电信—物理电子学] O641.4[理学—物理化学;理学—化学]
作者机构：[1]State Key Laboratory on Integrated Optoelectronics, and Tsinghua National Laboratory for Information Science and Technology Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
相关基金：Project supported by the National Basic Research Program of China （Grant Nos. 2011CB301902 and 2011CB301903）, the High Technology Research and Development Program of China （Grant Nos. 2007AA05Z429 and 2008AA03A194）, the National Natural Science Foundation of China （Grant Nos. 60723002, 50706022, 60977022, and 51002085）, the Beijing Natural Science Foundation of China （Grant No. 4091001）, the Industry, Academic and Research Combining, and the Public Science and Technology Special Program of Shenzhen of China （Grant No. 08CXY-14）. Acknowledgment The authors are grateful to Dr. Chen Li at the Department of Physics at Peking University for her CL measurements, and also to the Evans Analytical Group for their SIMS measurements.

关键词：气相外延生长, 有机金属, 发光特性, 薄膜, 氮化铟镓, 质谱测量, X射线光谱, 组合显示, InGaN, phase separation, composition inhomogeneity

中文摘要：

In x Ga 1-x N (x ～ 0.04) films are grown by metal organic vapour phase epitaxy.For the samples grown on GaN directly,the relaxation of InGaN happens when its thickness is beyond a critical value.A broad band is observed in the luminescence spectrum,and its intensity increases with the increasing degree of relaxation.Secondary ion mass spectrometry measurement rules out the possibility of the broad band originating from impurities in InGaN.The combination of the energy-dispersive X-ray spectra and the cathodeluminescence measurements shows that the origin of the broad band is attributed to the indium composition inhomogeneity caused by the phase separation effect.The measurement results of the tensile-strained sample further demonstrate the conclusions.

英文摘要：

InxGa1-xN （x - 0.04） films are grown by metal organic vapour phase epitaxy. For the samples grown on GaN directly, the relaxation of InGaN happens when its thickness is beyond a critical value. A broad band is observed in the 1 spectrum, and its intensity increases with the increasing degree of relaxation. Secondary ion mass spectrometry measurement rules out the possibility of the broad band originating from impurities in InGaN. The combination of the energy-dispersive X-ray spectra and the cathodeluminescence measurements shows that the origin of the broad band is attributed to the indium composition inhomogeneity caused by the phase separation effect. The measurement results of the tensile-strained sample further demonstrate the conclusions.

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