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中文摘要：
应用高分辨X射线衍射技术研究了MOCVD在宝石衬底上生长的InGaN/GaN多量子阱结构。测量（105）非对称面的倒易空间图获得量子阱结构的应变状态。由（002）面三轴衍射0级卫星峰峰位结合应变状况计算获得InGaN层中In含量,从（002）面的ω/2θ衍射谱以及小角反射谱获得多量子阱的一个周期的厚度,GaN层和InGaN层的厚度比。最后通过X射线动力学拟合的方法从（002）面的ω/2θ三轴衍射谱获得In的精确含量是25.5%,InGaN势阱层的精确厚度是1.67nm,GaN阻挡层的精确厚度是22.80nm。
英文摘要：
InGaN/GaN multiquantum wells grown on sapphire by MOCVD were analysed using high resolution X-ray diffraction. The RSM of （105） show strain of the system. Considering the strain the indium content was gotten from the position of SL0 in （002） TAXRD. The thickness of one repeat and the ratio of GaN to InGaN thicknesses were determined from the （002） ω/2θ HRXRD and GIXR. Fianlly, from the simulation of （002） ω/2θ TAXRD using X-ray scattering dynamical theory, we got the indium content is 25.5%, the thickness of In- GaN well is 1.67nm and GaN barrier is 22.80nm.
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