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中文摘要：
GaAs（110）衬底上生长GaAs外延层时，不同生长条件下存在单层和双层两种生长模式，对应反射高能电子衍射（RHEED）强度振荡呈现出单双周期的变化。通过透射电子显微镜（TEM）、室温和低温光荧光谱（PL谱）对两种生长模式下的样品进行了测量。结果表明，量子阱样品在双层生长模式下光学性能较差，单层生长模式下光学性能比较好，但是量子阱界面会变得粗糙。利用这一特点，采用RHEED强度振荡技术，能够实现在GaAs（110）衬底上生长高质量量子阱。
英文摘要：
There are two growth modes （monolayer-by-monolayer and bilayer-by-bilayer） under different conditions that correspond to monolayer and bilayer RHEED （Reflection High Energy Electron Diffraction） oscillations when GaAs epitaxial layer grows on GaAs （110） substrate. TEM （Transmission Electron Microscope） and photoluminescence measurements at room temperature and low temperature show that the quantum wells have very bad optical property under bilayer-by-bilayer growth mode and have nice optical property and rough interfaces under monolayer-by-monolayer growth mode. The results show that using different RHEED oscillations under different growth conditions, it is possible to grow high quality quantum wells on GaAs（110） surface.
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