中文摘要：

In this paper, we present the combination of drain field plate(FP) and Schottky drain to improve the reverse blocking capability, and investigate the reverse blocking enhancement of drain FP in Schottky-drain AlGaN/GaN high-electron mobility transistors(HEMTs). Drain FP and gate FP were employed in a two-dimensional simulation to improve the reverse blocking voltage(VRB) and the forward blocking voltage(VFB). The drain-FP length, the gate-FP length and the passivation layer thickness were optimized. VRBand VFBwere improved from-67 V and 134 V to-653 V and 868 V respectively after optimization. Simulation results suggest that the combination of drain FP and Schottky drain can enhance the reverse blocking capability significantly.

英文摘要：

In this paper, we present the combination of drain field plate （FP） and Schottky drain to improve the reverse blocking capability, and investigate the reverse blocking enhancement of drain FP in Schottky-drain AlGaN/GaN high-electron mobility transistors （HEMTs）. Drain FP and gate FP were employed in a two-dimensional simulation to improve the reverse blocking voltage （VRB） and the forward blocking voltage （VFB）. The drain-FP length, the gate-FP length and the passivation layer thickness were optimized. VRB and VFB were improved from -67 V and 134 V to -653 V and 868 V respectively after optimization. Simulation results suggest that the combination of drain FP and Schottky drain can enhance the reverse blocking capability significantly.