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Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-met
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2010.6.6
  • 页码：243503-243503
  • 相关项目：高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
作者： Huang, Y.|Chen, D. J.|Lu, H.|Shi, H. B.|Han, P.|Zhang, R.|Zheng, Y. D.|
同期刊论文项目
高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
期刊论文 79
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