中文摘要：

文章介绍了AZO/N＋-Si欧姆接触特性的研究和AZO/N＋-Si欧姆接触的制备新方法。实验发现AZO/N＋-Si的退火温度和时间对其欧姆接触特性有很大的影响,在最优的退火温度和时间条件下,测得最小比接触电阻为7.32×10-4Ω.cm2。它满足多晶硅太阳能电池的要求,可用于高效率硅太阳能电池透明电极的制备。

英文摘要：

The fabrication method and electrical characteristics of AZO/N＋-Si（polycrystalline silicon） contact are presented.For AZO/N＋-Si contact system,the optimal fabrication conditions for Ohmic contact are obtained,and the minimum specific contact resistance is tested to be 7.32×10-4 Ω·cm2,which can satisfy the performance requirements of devices and can be used for the fabrication of transparent electrodes in high-efficiency silicon solar cells.