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Radiative recombination model of degenerate semiconductor and photoluminescence properties of 3C-SiC
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2012.8.1
  • 页码：-
  • 相关项目：GHz波段高导热氮化铝基微波衰减陶瓷的设计与结构优化
作者： Yin, Ai-Cha|Jin, Hai-Bo|Yuan, Jie|Cao, Mao-Sheng|
同期刊论文项目
GHz波段高导热氮化铝基微波衰减陶瓷的设计与结构优化
期刊论文 19 专利 2
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