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中文摘要：
ZnO作为一种典型的直接带隙宽禁带半导体材料极具开发潜力和应用价值.随着图案化技术的不断发展优化,ZnO纳米棒阵列的精确可控制备逐步得到实现.本文综述了利用激光限域技术制备图案化ZnO纳米棒阵列的方法,并详述了其在太阳能电池和光电化学电池中的应用.激光干涉法制备的ZnO纳米阵列比表面积大且具有直线传输的优势,运用于光伏器件和电化学电池中增加了光吸收同时利于载流子传输,器件性能显著提高.图案化ZnO纳米棒阵列具有可控的三维空间结构,广泛应用关于各类能源器件中,具有极大的研究和应用价值.
英文摘要：
ZnO is a typical direct wide band-gap semiconductor material.It has great development potential and application value,and with the rapid development of patterning technology,the precise and controllable fabrication of ZnO nanorod array is gradually being realized.This paper reviews the fabrication of patterned ZnO nanorod arrays using the laser interference lithography technique and describes in detail the applications of patterned ZnO nanorod arrays in energy devices,such as solar cells and photoelectrochemical cells.It is found that ZnO nanorod arrays prepared by laser interferometry have an enhanced light-harvesting ability and enlarged surface area,which is widely used to promote light absorption and carrier transport.It is thus considered that patterned ZnO nanorod arrays with controllable three-dimensional space structures have great research and application value.
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