中文摘要：

利用射频磁控溅射技术,在生长了Ta缓冲层的石英玻璃衬底上采用不同溅射功率下制备了一系列的硅薄膜样品,用拉曼光谱和X射线衍射表征了薄膜的结晶性随溅射功率的变化情况。实验结果表明：随着溅射功率的增加,薄膜逐渐由非晶向微晶过渡,晶粒沿Si（311）面呈柱状生长,功率升高到80W时薄膜的晶化率达到75.4%,薄膜为典型的微晶结构。继续增加功率,薄膜的结晶性变差,晶化率下降,在60～120W之间存在一个优化理想的射频溅射功率,在此功率下生长的薄膜样品的结晶性最高。本文还尝试解释了Ta缓冲层在Si晶化过程中的作用。

英文摘要：

Using radio frequency magnetron sputtering technique with different sputtering power,a serial of Si-films were prepared on quartz-glass substrates covered with tantalum buffers.These Si films have been characterized by Raman scattering and X-ray diffraction.The experimental result shows that the structure of these films gradually transfer from amorphous to microcrystalline with the increase of the sputtering power.The crystal grains seem to be columned and grown by aligning with Si（311）.The typical microcrystalline structure with the crystalline ratio of 75.4% has been obtained by using sputtering power of 80 W.It indicates that there is an optimal sputtering power for satisfying the highest crystal ratio.The effects of Ta buffer layers which prompt crystallization of Si films also were discussed.