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中文摘要：
为了得到微波低噪声晶体管电磁脉冲的最灵敏端对和最敏感参数以及相关规律和器件的损伤／失效机理和模式，首先采用静电放电人体模型（HBM），针对两类硅晶体三极管（3DG218、3358）进行了静电放电敏感性相关实验，得到该类晶体管的ESD敏感端对是CB结；器件损伤时的灵敏参数是VBRCEO；又采用方波注入法对两晶体管进行实验比较了从CB结反向注入与从EB结反向注入的损伤电压值，发现该类器件的EMP最敏感端对是CB结而非以往人们认为的EB结。
英文摘要：
In order to get the most sensitive ports and parameters and related regularity of microwave low-noise transistor to electromagnetic pulse and the damage/failure mode and mechanism of microelectronic devices, firstly, the Human Body Model （HBM） is adopted in the related experiments of ESD sensibility of two kinds of silicon triode （3DG218,3358）. It finds that the sensitive port to ESD is CB junction and the sensitive parameter is VBRCEO when the device damaged; and then the square-wave injection is adopted in the research. Two different batches of 3358 transistor, which produced by a famous foreign company, are adopted in the experiment. The voltages of inversing injection into CB and EB junction are compared in order to find which is more sensitive, and finds that the CB junction is the most sensitive port to EMP. The conclusion is different with what has been confirmed in previous research.
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