中文摘要：

采用离子束溅射技术在不同Ar^＋能量下溅射Ge单层膜。用Raman光谱和AFM图谱对薄膜进行表征，得到Ge薄膜结晶性和晶粒大小随Ar^＋能量变化的波动性关系。在0．6keV的Ar^＋能量下，得到晶粒较小的Ge晶化薄膜，0．8keV能量下，Ge薄膜为非晶结构，1．0keV能量下，得到晶粒较大的Ge晶化薄膜。通过对沉积原子数与沉积原子能量的分析，解释了这一波动性变化。

英文摘要：

A series of germanium single films were fabricated by ion beam sputtering at different Ar^＋ energy . These films were characterized using Raman scattering and AFM spectra. It is found that the crystalline property and crystal grain size of the germanium films fluctuate following Ar^＋ energy. When the Ar^＋ energy is 0.6 keV,the crystal grain has smaller size. When the Ar^＋ energy is 0.8keV,the amorphous film is obtained. When the Ar^＋ energy is 1.0keV, the crystal grain has bigger size. The waved change of the crystal grain size is explained as the influence of the number and energy of the germanium atoms deposited at different Ar^＋ energy.