基于一维半导体纳米材料发展新型纳米光电器件是纳米科技研究中的重要领域.近年来纳米线肖特基势垒的输运特性及其在光电器件方面的应用受到研究人员的广泛关注.本文中,对氧化物纳米线肖特基势垒的研究背景以及我们近年的研究进展进行评述,主要包括以下三个方面:(1)氧化物纳米线肖特基势垒的输运特性研究;(2)氧化物纳米线肖特基势垒输运特性的调控方法探索;(3)基于氧化物纳米线肖特基势垒的光电器件研究.
The study on electronic and optoelectronic nanodevices of one-dimensional semiconductor nanomaterials is an important subject in nanoscience and nanotechnology. In recent years, the investigations of transport properties of nanowire Schottky barrier and its applications in electronic and optoelectronic nanodevices have attracted much attention. In this paper, the research background of oxide nanowire Schottky barrier and the recent research progresses in our group have been reviewed, which include: (1) The electrical transport properties of oxide nanowire Schottky barrier; (2) The controlling methods of oxide nanowire Schottky barrier; (3) The high- performance electronic and optoelectronic nanodevices based on oxide nanowire Schottky barrier.