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测量计算金属-半导体接触电阻率的方法
  • ISSN号：1003-353X
  • 期刊名称：半导体技术
  • 时间：0
  • 页码：85-89
  • 语言：中文
  • 分类：TN304.07[电子电信—物理电子学] TN305.93[电子电信—物理电子学]
  • 作者机构：[1]武汉大学物理技术与科学学院,武汉430072
  • 相关基金：国家自然科学基金资助项目（10675094,10205010,10435060）
  • 相关项目：p型GaN表面透明低阻欧姆接触的离子注入制备和特性研究
作者： 李鸿渐|石瑛|
关键词： 金属-半导体接触, 接触电阻率, 传输线模型, metal-semiconductor contact, specific contact resistance, transmission line model
中文摘要：

如何测量、计算得到精确接触电阻值已凸显重要。介绍了多种测量计算金属-半导体欧姆接触电阻率的模型和方法，如矩形传输线模型、圆点传输线模型、多圆环传输线模型等，对各方法的利弊进行了讨论，并结合最新的研究进展进行了评述和归纳。综合多种因素考虑，认为圆点传输线模型是一种较好的测量金属半导体接触电阻率的方法。

英文摘要：

How to precisely measure and calculate the contact resistance values becomes an important research project. Various models and methods for the measurement and calculation of special contact resistance in metal-semiconductor contacts were summarized. Both the advantages and disadvantages of the models and methods were discussed, including linear transfer length method, circular transmission line model, multiple annular electrode, etc. Combined with the latest research progress, the operate methods were commented and concluded. Comprehensive balance of various factors, a circular transmission line model （CTLM） was recommended as an ideal method for the measurement of special contact resistance in metal-semiconductor contacts.

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期刊信息
  • 《半导体技术》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:中国电子科技集团公司第十三研究所
  • 主编：赵小玲
  • 地址：石家庄179信箱46分箱
  • 邮编：050051
  • 邮箱：informax@heinfo.net
  • 电话：0311-87091339
  • 国际标准刊号：ISSN：1003-353X
  • 国内统一刊号：ISSN：13-1109/TN
  • 邮发代号:18-65
  • 获奖情况:
  • 中文核心期刊,中国科技论文统计用刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘（网络版）,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:6070