位置：成果数据库 > 期刊 > 期刊详情页
基于RPP模型的单粒子在轨翻转率计算
  • 期刊名称：第二十四届全国空间探测学术交流会论文摘要集
  • 时间：2011
  • 页码：367-374
  • 相关项目：地面模拟空间辐射环境下的技术方法及单粒子效应研究
作者： 姚会军|张战刚|莫丹|罗捷|
同期刊论文项目
地面模拟空间辐射环境下的技术方法及单粒子效应研究
期刊论文 56 会议论文 3
同项目期刊论文
Influence of edge effects on single event upset susceptibility of SOI SRAMs
A flexible and robust soft-error testing system for microelectronic devices and integrated circuits
Hf/HfO_2基双极阻变存储器研究
基于Geant4的三维半导体器件单粒子效应仿真
极端低温下硅基器件和电路特性研究进展
锁相环敏感模块的单粒子效应与设计加固
Characteristics of HfO2/Hf-based bipolar resistive memories
Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout
The impact of X-ray and proton irradiation on HfO2/Hf-based bipolar resistive memories
Angular dependence of multiple-bit upset response in static random access memories under heavy ion i
Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers
Modeling the applicability of linear energy transfer on single event upset occurrence
Simulation of the characteristics of low-energy proton induced single event upset
Fabrication of different pore shapes by multi-step etching technique in ion-irradiated PET membranes
Effectiveness and failure modes of error correcting code in industrial 65 um CMOS SRAMs exposed to h
Raman spectrum study of graphite irradiated by swift heavy ions
各向异性静态随机存储器中的多位翻转分析研究
MOSFET单粒子烧毁引起的DC/DC电源变换器功能失效试验研究
Phase coherent transport in InSb nanowires
单粒子效应加速器试验中倾角测量方法的适用性研究
Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bu
Swift heavy ions induced irradiation effects in monolayer graphene and highly oriented pyrolytic gra
一种改进的SRAM单粒子效应检测系统
Modeling and assessing the influence of linear energy transfer on multiple bit upset susceptibility
Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence
A Novel Built-in Current Sensor for N-WELL SET Detection
Geant4模拟δ电子对单粒子翻转的影响
0.18μm部分耗尽绝缘体上硅互补金属氧化物半导体电路单粒子瞬态特性研究
22 nm工艺超薄体全耗尽绝缘体上硅晶体管单粒子瞬态效应研究
DCIV技术表征MOS/SOI界面陷阱能级密度分布
DCIV技术提取SOI器件前栅界面与背界面态密度
Impact of temperature on single event upset measurement by heavy ions in SRAM devices
深亚微米SRAM质子单粒子翻转实验研究
重离子产生δ电子对SRAM单粒子翻转的影响
重离子核反应对单粒子翻转的影响（英文）
快重离子辐照对MoS2热导率的影响研究
Experimental study on heavy ion single-event effects in flash-based FPGAs