中文摘要：

采用离子束溅射技术,在不同温度的Si（100）衬底上生长了一系列Ge量子点样品,利用AFM和Raman光谱对样品表面形貌和结构进行表征,结果表明,随着温度升高,量子点密度增大（750℃生长的量子点密度达到1.85×10^10cm^-2）,均匀性变好及结晶性增强;但随生长温度升高,Si-Ge互混程度也同时加剧。

英文摘要：

A serial of Ge quantum dot samples were grown by ion beam sputtering on Si（100）substrate at different temperature.The surface morphology and structure were studied with AFM and Raman spectra,our results indicated that with temperature increasing,the density of quantum dots increased（At temperature of 750℃,the density of the quantum dots was up to 1.85×10^10cm^-2）,the distribution of the quantum dots became more ordered,and the crystallinity became better.But the alloying processing was enhanced at the same time.