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A write buffer design based on stable and area-saving embedded SRAM for flash applications
  • ISSN号：1674-7321
  • 期刊名称：SCIENCE CHINA Technological Sciences
  • 时间：2015.2.1
  • 页码：357-361
  • 相关项目：面向三维集成的纳米尺度电荷陷阱存储器机理与可靠性研究
作者： CAO HuaMin, HUO ZongLiang, WANG Yu, LI Ting, LIU Jing, JIN Le|
同期刊论文项目
面向三维集成的纳米尺度电荷陷阱存储器机理与可靠性研究
期刊论文 24 会议论文 15
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