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中文摘要：
用脉冲激光沉积法（PLD）在n型硅（111）平面上生长ZnO薄膜。X射线衍射（xRD）在20=34。处出现了唯一的衍射峰，半高宽为0．75°；傅里叶红外吸收（FTIR）在414．92cm^-1附近出现了对应Zn-O键的红外光谱的特征吸收峰；光致发光（PL）测量发现了位于370和460nm处的室温光致发光峰；扫描电子显微镜（SEM）和选区电子衍射（SAED）显示了薄膜的表面形貌以及晶格结构。利用PLD法制备了具有C轴取向高度一致的六方纤锌矿结构ZnO薄膜。
英文摘要：
ZnO thin films were deposited on n-Si（lll） substrates by pulsed laser deposition （PLD）. X-ray diffraction （XRD） showed that there was only one sharp diffraction peak at 20=34° with the full width at the half maximum （FWHM） of 0.75°. Fourier transform infrared spectrophotometer （FTIR） presented a intensely cliffy absorption peak located at 414.92nm which was resulted from Zn-O bonds. Photoluminescence （PL） gave us two light emission bands, corresponding to the wavelength of 370 and 460nm. Scanning electron microscopy （SEM） and selected-area electron diffraction （SAED） were employed to analyze the morphology and crystal lattice structure of ZnO thin films. ZnO thin films which had an excellently c-axis preferred orientation and a hexagonal wurtzite structure were prepared.
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