中文摘要：

采用热蒸镀膜方法，在制备出As2S3、As2Se3、GeS2、GeSe2、Ge20As25S55、Ge20As25Se55和Ge10As40S20Se30七个体系硫系非晶态半导体薄膜的基础上，运用X射线粉末衍射、扫描电镜、透射电镜和吸收或透射光谱等测试手段，系统地探讨了薄膜在氩离子激光辐照作用下的光致暗化、光致漂白和光致结晶等光致效应及机理。在As2S3、As2Se3和Ge10As40S20Se30薄膜中观察到明显的光致暗化效应，而在GeS2、GeSe2、Ge20As25S55和Ge20AS25Se55薄膜中则观察到明显的光致漂泊效应。经氨离子激光辐照后，在薄膜中均观察到明显的光致结晶现象。

英文摘要：

Amorphous semiconductor chalcogenide As2S3, As2Se3, GeS2, GeSe2, Ge20As25S55, Ge20As25Ses5, and Ge10AS40S20Se30 films were prepared by the thermal evaporation and studied by the X-ray diffraction, infrared, scanning electron microscope, and transmission electron microscope. With Ar ion laser irradiation, the mechanisms of photodarkening, photobleaching and photocrystallization were discussed. Photodarkening was observed in ASES3 and As2Se3 films, photobleaching was observed in GeS2, GeSe2, Ge20AS25S55, and Ge20As25Se55 films, and photoinduced crystallization was observed in all prepared films after Ar ion laser illumination.