中文摘要：

采用真空热蒸发法制备了CsI（T1）薄膜，然后进行了不同温度的真空热处理．用X射线衍射仪、扫描电子显微镜、X射线荧光光谱仪及正电子寿命谱仪对CsI（T1）薄膜样品进行了分析，并测得了样品的光产额．结果表明，该CsI（T1）薄膜沿（200）晶面择优取向生长．经过较低温度退火，CsI薄膜中的Tl^＋离子向薄膜表面扩散，薄膜中缺陷数量增加，且尺寸较大，光产额略微增高．经过250℃退火，薄膜中低温退火所形成缺陷得到恢复，薄膜缺陷尺寸变小，且数目减少，具有较好的结晶状态，光产额提高．经过400℃退火，薄膜结构发生显著变化，薄膜中缺陷大幅增加，结晶状态变差，Ti^＋含量减少，光产额急剧下降．

英文摘要：

CsI（T1） films were prepared by thermal evaporation and annealed at various temperatures. Structure and scintillation properties of the films were examined using X-ray diffraction, scanning electron microscope, X-ray fluorescence spectrometry, positron annihilation lifetime spectroscope and scintillation pulse height spectrometry. Results show that the CsI films are in micro-columnar structure with a preferential （200） orientation. When the sample is annealed at 150℃, Tl^＋ ions diffuse to the sample surface. Consequently, the amount and size of the vacancy type of defects increase. However,the light yield increases a little atter anneaiea. The samples annealed at 250℃ have a good crystalline state and scintillation properties. As the annealing temperature increases to 400℃, the light output of the samples decreases seriously due to the dramatic change of their microstructure and the decrease of Ti^＋.